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Preface |
6 |
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Acknowledgements |
8 |
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Contents |
9 |
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1 Introduction to SiC and Thermoelectrical Properties |
12 |
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1.1 Background |
12 |
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1.2 Silicon Carbide |
14 |
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1.3 Growth of SiC |
15 |
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1.4 Thermoelectrical Properties |
16 |
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1.5 High-Temperature SiC MEMS Sensors |
18 |
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References |
18 |
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2 Fundamentals of Thermoelectrical Effect in SiC |
21 |
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2.1 Thermoresistive Effect |
21 |
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2.1.1 Physical Parameters and Definitions in Semiconductors |
23 |
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2.1.2 Single-Crystalline SiC |
23 |
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2.1.3 Polycrystalline SiC |
25 |
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2.1.4 Amorphous SiC |
27 |
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2.2 Thermoelectronic Effects |
27 |
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2.3 Thermocapacitive Effect |
28 |
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2.4 Thermoelectric Effect |
29 |
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2.5 Recent Advances in Characterisation of Thermoelectrical Effects in SiC at High Temperatures |
30 |
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2.5.1 Experimental Set-up for Characterisation of Thermoelectrical Effect |
30 |
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2.5.2 Thermoresistive Effect in Single Layer of SiC |
31 |
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2.5.3 Thermoelectrical Effect in Multi-layers of SiC |
39 |
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2.6 4H-SiC p–n Junctions |
41 |
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2.7 Other Thermoelectrical Effects at High Temperatures |
44 |
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2.7.1 Thermoelectric Effect |
44 |
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2.7.2 Thermocapacitive Effect |
46 |
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References |
48 |
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3 Desirable Features for High-Temperature SiC Sensors |
52 |
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3.1 Sensitivity |
52 |
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3.2 Linearity |
54 |
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3.3 Thermal Time Response |
56 |
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3.4 Low Power Consumption |
57 |
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3.5 Stability and Other Desirable Features |
58 |
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References |
59 |
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4 Fabrication of SiC MEMS Sensors |
63 |
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4.1 Growth and Doping |
63 |
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4.1.1 Growth of SiC |
63 |
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4.1.2 Doping of SiC |
65 |
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4.2 Etching of SiC |
65 |
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4.2.1 Electrochemical Etching |
67 |
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4.2.2 Chemical Etching |
67 |
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4.2.3 Dry Etching or Reactive-Ion Etching (RIE) |
68 |
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4.3 Ohmic and Schottky Contacts to SiC |
68 |
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4.3.1 Ohmic Contact |
68 |
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4.3.2 Schottky Contact |
73 |
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4.4 Fabrication Processes of SiC MEMS Sensors |
75 |
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4.4.1 Surface Micromachining |
75 |
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4.4.2 Bulk Micromachining |
76 |
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4.4.3 Fabrication of MEMS Device with Integrated Cooling System |
79 |
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References |
79 |
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5 Impact of Design and Process on Performance of SiC Thermal Devices |
83 |
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5.1 Substrate Influence |
83 |
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5.2 Doping Influence |
84 |
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5.3 Morphologies |
85 |
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5.4 Deposition Temperature |
87 |
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5.5 Geometry and Dimension |
87 |
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References |
88 |
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6 Applications of Thermoelectrical Effect in SiC |
92 |
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6.1 Temperature Sensors, Temperature Control/Compensation and Thermal Measurement |
92 |
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6.1.1 Thermistors |
93 |
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6.1.2 p–n Junction Temperature Sensors |
95 |
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6.2 Thermal Flow Sensors |
96 |
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6.2.1 Hot-Wire and Hot-Film Flow Sensors |
97 |
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6.2.2 Calorimetric Flow Sensors |
101 |
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6.2.3 Time-of-Flight Flow Sensors |
102 |
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6.3 Convective Accelerometers and Gyroscopes |
103 |
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6.3.1 Convective Accelerometers |
104 |
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6.3.2 Convective Gyroscopes |
105 |
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6.4 Other Applications |
105 |
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6.4.1 Combustible Gas Sensors |
105 |
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6.4.2 SiC MEMS with Integrated Heating, Sensing and Microfluidic Cooling |
106 |
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References |
110 |
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7 Future Prospects of SiC Thermoelectrical Sensing Devices |
114 |
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7.1 Novel Platforms of SiC Films on Insulation Substrates |
114 |
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7.2 Integration of SiC Thermoelectrical Devices with Other Materials and Devices |
116 |
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7.3 SiC Thermal Actuators |
117 |
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7.4 Challenges and Future Developments of SiC Sensing Devices |
118 |
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References |
120 |
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